publication number s98ws064rb0hi001-002 revision 01 issue date august 20, 2010 s98ws064rb0hi001, -002 s98ws064rb0hi001, -002 cover sheet stacked multi-chip product (mcp) 64 megabit (4 m x 16-bi t), 1.8 volt-only si multaneous read/write, burst mode flash memory with 32 megabit (2m x 16-b it) cellularram data sheet (advance information) notice to readers: this document states the current techni cal specifications regarding the spansion product(s) described herein. each product describ ed herein may be designated as advance information, preliminary, or full production. see notice on data sheet designations for definitions.
2 s98ws064rb0hi001, -002 s98ws064rb0hi001-002_01 august 20, 2010 data sheet (advance information) notice on data sheet designations spansion inc. issues data sheets with advance informati on or preliminary designations to advise readers of product information or int ended specifications throu ghout the product life cycle, including development, qualification, initial production, and fu ll production. in all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. the following descriptions of spansion data sheet designations are presented here to highlight their presence and definitions. advance information the advance information designation indicates that spansion inc. is developing one or more specific products, but has not committed any design to production. information pr esented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. spansion inc. therefore places the following c onditions upon advance information content: ?this document contains information on one or mo re products under development at spansion inc. the information is intended to help you evaluate th is product. do not design in this product without contacting the factory. spansion inc. reserves t he right to change or discont inue work on this proposed product without notice.? preliminary the preliminary designation indicates that the produc t development has progressed such that a commitment to production has taken place. this designation covers several aspects of the product life cycle, including product qualification, initial produc tion, and the subsequent phases in t he manufacturing process that occur before full production is achieved. changes to the technical specifications presented in a preliminary document should be expected while keeping these as pects of production under consideration. spansion places the following conditions upon preliminary content: ?this document states the current technical sp ecifications regarding the spansion product(s) described herein. the preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. due to the phases of the manufacturing process that require maintaining efficiency and quality, this doc ument may be revised by subsequent versions or modifications due to changes in technical specifications.? combination some data sheets contain a combination of products with different designations (advance information, preliminary, or full production). this type of docum ent distinguishes these prod ucts and their designations wherever necessary, typically on the first page, t he ordering information page, and pages with the dc characteristics table and the ac erase and program ta ble (in the table notes). the disclaimer on the first page refers the reader to the notice on this page. full production (no designation on document) when a product has been in production for a period of time such that no changes or only nominal changes are expected, the preliminary designation is remove d from the data sheet. nominal changes may include those affecting the number of ordering part numbers available, such as t he addition or deletion of a speed option, temperature range, package type, or v io range. changes may also include those needed to clarify a description or to correct a typographical error or incorre ct specification. spansion inc. applies the following conditions to documents in this category: ?this document states the current technical sp ecifications regarding the spansion product(s) described herein. spansi on inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. however, typographical or specification corrections, or mo difications to the valid comb inations offered may occur.? questions regarding these docum ent designations may be directed to your local sales office.
this document contains information on one or more products under development at spansion inc. the information is intended to he lp you evaluate this product. do not design in this product without contacting the factory. spansion inc. reserves the right to change or discontinue work on this proposed pr oduct without notice. publication number s98ws064rb0hi001-002 revision 01 issue date august 20, 2010 features ? single 1.8 volt read, program and erase (1.7 to 1.95 volt) ? simultaneous read/write operation ? data can be continuously read from one bank while executing erase/program functions in other bank ? zero latency between read and write operations ? package ? 88-ball thin fine pitch bga ? 10.0 x 8.0 x 1.2 mm ? speed ? flash and cellularram: 108 mhz ? page mode read access ? flash: 8-word page with page access time of 20 ns ? cellularram: 16-word page with page access time of 20 ns for detailed specifications, please refer to the individual data sheets: s98ws064rb0hi001, -002 stacked multi-chip product (mcp) 64 megabit (4 m x 16-bi t), 1.8 volt-only si multaneous read/write, burst mode flash memory with 32 megabit (2m x 16-b it) cellularram data sheet (advance information) document publication identification number (pid) s29ws064r s29ws064r_00 32 mb async/page/burst cellularram swm032d133s3r
4 s98ws064rb0hi001, -002 s98ws064rb0hi001-002_01 august 20, 2010 data sheet (advance information) 1. ordering information the order number is formed by a valid combination of the following: 1.1 valid combinations the following configurations are planned to be supported for this device. consult the local sales office to confirm availability of specific valid combinatio ns and to check on newly released combinations. note: bga package marking omits leading s and packing type designator from ordering part number. 2. product selector guide s98ws 064 r b0 h w 001 0 packing type 0= tray 3 = 13-inch tape and reel additional ordering options see valid combinations table temperature range i = industrial (?40c to +85c) w = wireless (?25c to +85c) package material h = low-halogen, lead (pb) free package dram density b0 = 32 megabit (2m x 16-bit) process technology r = 65 nm mirrorbit ? technology flash density 064 = 64 megabit (4m x 16-bit) product family s98ws = stacked multi-chip product, simultaneous read/write, burst mode flash memory, 1.8-volt operation table 1.1 valid combinations product family flash density process technology dram density package material / temperature range model number packing type s98ws 064 r b0 hi, hw 001, 002 0, 3 part# s98ws064rb0hw001x/ s98ws064rb0hi001x s98ws064rb0hw002x/ s98ws064rb0hi002x flash burst frequency 108 mhz 108 mhz cellularram frequency 108 mhz 108 mhz dyb unlocked unlocked factory secured silicon region locked locked customer secured silicon region unlocked unlocked boot option top boot bottom boot
august 20, 2010 s98ws064rb0hi001-002_01 s98ws064rb0hi001, -002 5 data sheet (advance information) 3. mcp block diagram a0-a20 a0-a20 a21 a21 rdy rdy dq0-dq15 clk clk avd# avd# f-ce# ce# f-oe# oe# f-rst# reset# vss f-acc acc f-we# we# f-vcc vio vccq a0-a20 clk avd# r-ce# ce# r-oe# oe# r-lb# lb# w ait r-ub# ub# r-we# we# r-cre cre vcc r-vcc vccq dq0-dq15 vss vcc dq0-dq15 vss, vssq ws064r flash memory 32 mb cellularram
6 s98ws064rb0hi001, -002 s98ws064rb0hi001-002_01 august 20, 2010 data sheet (advance information) 4. connection diagram c bjk e dg fh a m l a12 a11 vccq r-cre a15 a1 3 rfu a16 rfu nc nc v ss 7 5 4 3 2 1 8 6 rfu a21 dq15 vccq a10 a9 rdy a14 dq7 nc nc v ss clk rfu dq6 rfu a20 r-ce# dq1 3 a 8 dq14 v ss rfu f-vcc dq4 r-vcc avd# r-we# dq5 f-we# dq12 v ss v ss v ss dq11 rfu rfu f-acc dq10 f-r s t# dq 3 f-vcc rfu a19 dq9 rfu rfu rfu dq2 r-ub# dq1 vccq r-lb# a1 8 f-oe# rfu a7 a17 dq 8 a6 dq0 nc nc v ss a5 a4 rfu f-ce# a2 a 3 a0 a1 r-oe# nc nc v ss legend o u trigger/nc b a ll s re s erved for f u t u re u s e s h a red fl as h only cell u l a rram only
august 20, 2010 s98ws064rb0hi001-002_01 s98ws064rb0hi001, -002 7 data sheet (advance information) 5. input/output descriptions signal description flash cellularram a21 nor flash only address inputs x a20-a0 nor flash/cellularram address inputs x x dq15-dq0 flash data input/output, shared between nor and cellularram x x f-ce# nor flash chip-enable input #1. asynchronous relative to clk for burst mode x f-oe# nor output enable input. asynchronous relative to clk for burst mode x f-we# nor write enable input x f-v cc nor flash device power supply (1.7v - 1.95v) x v ccq input/output buffer power supply x x v ss ground xx rdy flash ready output. indicates the status of the burst read. v ol = data valid. the flash rdy pin is shared with the wait pin of the cellularram. xx clk nor flash clock, shared with clk of burst-mode cellularram. the first rising edge of clk in conjunction with avd# low latches the address input and activates burst mode operation. after the initial word is output, subsequent rising edges of clk increment the internal address counter. clk should remain low during asynchronous access. xx avd# nor flash address valid input. shared with av d# of burst-mode cellularram. indicates to device that the valid address is present on the address inputs. v il = for asynchronous mode, indicates valid address; for burst mo de, causes starting addr ess to be latched on rising edge of clk. v ih = device ignores address inputs. xx f-rst# nor flash hardware reset input. v il = device resets and returns to reading array data x f-acc nor flash accelerated input. at v hh , accelerates programming; automatically places device in unlock bypass mode. at v il , disables all program and erase functions. should be at v ih for all other conditions. x r-ce# chip-enable input for cellularram x r-oe# cellularram output enable input. asyn chronous relative to clk for burst mode x r-we# cellularram write enable input x r-cre control register enable (cellularram). for cellularram only. x r-v cc cellularram power supply x r-ub# upper byte control (cellularram) x r-lb# lower byte control (cellularram) x nc not connected. no device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. the connection may safely be used for routing space for a signal on a printed circuit board (pcb). dnu do not use. a device internal signal may be connected to the package connector. the connection may be used by spansion for test or other purposes and is not intended for connection to any host system signal. any dnu signal related function will be inactive when the signal is at v il . the signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to v ss . do not use these connections for pcb signal routing channels. do not connect any host system signal to these connections. rfu reserved for future use. no device internal signal is currently connected to the package connector but there is potential future use for the connector for a signal. it is recommended to not use rfu connectors for pcb routing c hannels so that the pcb may take advantage of future enhanced features in compatible footprint devices.
8 s98ws064rb0hi001, -002 s98ws064rb0hi001-002_01 august 20, 2010 data sheet (advance information) 6. physical dimensions tse088?88-ball thin fine pitch ball grid array (fbga) 10 x 8 mm package package tse 088 jedec n/a d x e 10.00 mm x 8.00 mm package symbol min nom max note a --- --- 1.20 profile a1 0.20 --- --- ball height a2 0.82 --- 0.90 body thickness d 10.00 bsc. body size e 8.00 bsc. body size d1 8.80 bsc. matrix footprint e1 5.60 bsc. matrix footprint md 12 matrix size d direction me 8 matrix size e direction n 88 ball count ?b 0.33 --- 0.43 ball diameter ee 0.80 bsc. ball pitch ed 0.80 bsc ball pitch sd / se 0.40 bsc. solder ball placement a3,a4,a5,a6,m3,m4,m5,m6 depopulated solder balls 3493\ 16-038.22 \ 05.12.05 notes: 1. dimensioning and tolerancing methods per asme y14.5m-1994. 2. all dimensions are in millimeters. 3. ball position designation per jep95, section 4.3, spp-010. 4. e represents the solder ball grid pitch. 5. symbol "md" is the ball matrix size in the "d" direction. symbol "me" is the ball matrix size in the "e" direction. n is the number of populted solder ball positions for matrix size md x me. 6 dimension "b" is measured at the maximum ball diameter in a plane parallel to datum c. 7 sd and se are measured with respect to datums a and b and define the position of the center solder ball in the outer row. when there is an odd number of solder balls in the outer row sd or se = 0.000. when there is an even number of solder balls in the outer row, sd or se = e/2 8. "+" indicates the theoretical center of depopulated balls. 9 a1 corner to be identified by chamfer, laser or ink mark, metallized mark indentation or other means. 10 outline and dimensions per customer requirement. c 6 b side view 88x 0.15 m c mc ab 0.08 c c se 7 e1 8 7 ed 5 4 3 1 2 ee 6 d1 pin a1 corner cb d e gf jh sd 7 bottom view l k m a a d e 0.10 c (2x) c 0.10 b (2x) 9 top view pin a1 corner a1 a a2 index mark 0.20 0.08
august 20, 2010 s98ws064rb0hi001-002_01 s98ws064rb0hi001, -002 9 data sheet (advance information) 7. revision history section description revision 01 (august 20, 2010) initial release
10 s98ws064rb0hi001, -002 s98ws064rb0hi001-002_01 august 20, 2010 data sheet (advance information) colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, genera l office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers t hat, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intole rable (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to you and/or any third party for any claims or damages arising in connection with abo ve-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document r epresent goods or technologies s ubject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export ad ministration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subjec t to change without notice. this document ma y contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warran ty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 2010 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse ? , ornand ? , ecoram? and combinations thereof, are trademarks and registered trademarks of spansion llc in the united states and other countries. other names used are for informational purposes only and may be trademarks of their respective owners.
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